◆Silicon wafer surface contamination is an important problem affecting the production quality of microelectronic devices, The scanning electron microscope not only has a high resolution to clearly show the morphology and structure of the contamination, but also can analyze the composition of the main elements of the contamination.

◆Passivation layer and metallization inspection: In device processing, the angle of the passivation layer steps (SiO₂, PSG, and PBSG) and the morphology of the metallization on the steps are critical to device yield and reliability. SEM is an effective means of examining these properties, showing the heterostructure of homogeneous membranes as well as the metallization quality.

◆Line width measurement and process control: With the development of microelectronic technology, the processing line has entered the submicron stage, and the requirements for process control accuracy have reached the nanometer order of magnitude. SEM's high resolution and precise measurement capabilities make it an important tool for line width measurement, ensuring that the precision structure of the device can be realized.

◆Surface morphology and internal structure analysis: SEM can be used to analyze the surface topography of the device, and the position and depth of the Pn junction can be determined in combination with longitudinal profile dissection and corrosion technology. SEM can also observe the fracture topography and internal structure of the device, revealing the fracture mechanism.

◆Physical parameter measurement: The beam induced current operation mode of the SEM can be used to measure physical parameters of the device, such as junction depth, depletion layer width, MOS tube channel length, diffusion length, and minority carrier life time. This method is particularly suitable for the analysis of short-channel devices.

◆Failure analysis and reliability studies: SEM plays an important role in failure analysis and reliability studies. Defects in the metallization layer, electromigration phenomena, dislocations in the Pn junction, and other defects can be observed through the voltage contrast and beam induced current operation mode of the SEM.